Characterization of the VT-instability in SiO2/HfO2 gate dielectrics

被引：166

作者：

Kerber, A ^{[1
]}

Cartier, E ^{[1
]}

Pantisano, L ^{[1
]}

Rosmeulen, M ^{[1
]}

Degraeve, R ^{[1
]}

Kauerauf, T ^{[1
]}

Groeseneken, G ^{[1
]}

Maes, HE ^{[1
]}

Schwalke, U ^{[1
]}

机构：

[1] Infineon technol AG, IMEC, B-3001 Louvain, Belgium

来源：

41ST ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM | 2003年

关键词：

V-T; -; instability; defect band; HfO2; alternative gate dielectrics; charge pumping;

D O I：

10.1109/RELPHY.2003.1197718

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electrical stability of CMOS devices with conventional gate dielectrics is commonly studied using static, (DC) measurement techniques. By applying the same methods to MOS devices with alternative gate dielectrics, it has been shown that alternative gate stacks suffer from severe charge trapping and that the trapped charge is not stable, leading to fast transient charging components. In this paper time-resolved measurement techniques down to the mus time range are applied to capture the fast transient component of,the charge trapping observed in SiO2/HfO2 dual layer gate stacks. Furthermore, its impact on the device performance and reliability of n-channel FETs is discussed.

引用

页码：41 / 45

页数：5

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