Ambipolar gate effect and low temperature magnetoresistance of ultrathin La0.8Ca0.2MnO3 films -: art. no. 037204

被引：27

作者：

Eblen-Zayas, M ^{[1
]}

Bhattacharya, A ^{[1
]}

Staley, NE ^{[1
]}

Kobrinskii, AL ^{[1
]}

Goldman, AM ^{[1
]}

机构：

[1] Univ Minnesota, Sch Phys & Astron, Minneapolis, MN 55455 USA

来源：

PHYSICAL REVIEW LETTERS | 2005年 / 94卷 / 03期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1103/PhysRevLett.94.037204

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Ultrathin La0.8Ca0.2MnO3 films have been measured in a field-effect geometry. The gate electric field produces a significant ambipolar decrease in resistance at low temperatures. This is attributed to the development of a pseudogap in the density of states and the coupling of localized charge to strain. Within a mixed phase scenario, the gate effect and magnetoresistance are interpreted in the framework of a "general susceptibility," which describes how phase boundaries move through a hierarchical pinning landscape.

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页码：1 / 4

页数：4

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