Linear array of Si-Ge heterojunction photodetectors monolithically integrated with silicon CMOS readout electronics

被引：22

作者：

Masini, G ^{[1
]}

Cencelli, V

Colace, L

de Notaristefani, F

Assanto, G

机构：

[1] Univ Roma Tre, Natl Inst Phys Matter, Nonlinear Opt & Optoelect Lab, I-00146 Rome, Italy

[2] Natl Inst Nucl Phys, I-00146 Rome, Italy

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2004年 / 10卷 / 04期

关键词：

germanium-on-silicon; monolithic integration; near-infrared (NIR); photodetectors;

D O I：

10.1109/JSTQE.2004.833970

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We describe a linear array of Ge-Si heterojunction photodiodes monolithically integrated on a complementary metaloxide-semiconductor (CMOS) integrated circuit for detection and imaging in the near infrared. Detectors are realized by thermal evaporation of Ge films at the end of the standard CMOS process on substrates held at low temperature (300 degreesC). Each of the 64 detectors is connected to a front-end stage for photocurrent integration and analog-to-digital conversion.

引用

页码：811 / 815

页数：5

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