X-ray photoelectron spectroscopy characterization of aluminum nitride surface oxides: Thermal and hydrothermal evolution

被引:66
作者
Dalmau, R. [1 ]
Collazo, R. [1 ]
Mita, S. [1 ]
Sitar, Z. [1 ]
机构
[1] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA
关键词
aluminum nitride (AlN); aluminum hydroxides; alumina; x-ray photoelectron spectroscopy (XPS); oxidation;
D O I
10.1007/s11664-006-0044-x
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Oxidized surfaces of aluminum nitride (AIN) epilayers grown on sapphire substrates and of AIN bulk crystals grown by physical vapor transport were studied by x-ray photoelectron spectroscopy (YPS). Analysis of the oxygen core level spectra showed approximately equal contributions from oxygen in two bonding states, which were identified by the binding energies and relative separation of the fitted peaks as OH- and O2-. The oxide on air-exposed AIN surfaces was identified as aluminum oxide hydroxide. Systematic annealing experiments were conducted in vacuum to study the thermal evolution of hydroxide layers, and a dehydration mechanism resulting in the formation of Al2O3 at high temperature was identified.
引用
收藏
页码:414 / 419
页数:6
相关论文
共 23 条
[1]   THE THERMAL-STABILITY OF AIN [J].
ABID, A ;
BENSALEM, R ;
SEALY, BJ .
JOURNAL OF MATERIALS SCIENCE, 1986, 21 (04) :1301-1304
[2]  
Alexander MR, 2000, SURF INTERFACE ANAL, V29, P468, DOI 10.1002/1096-9918(200007)29:7<468::AID-SIA890>3.0.CO
[3]  
2-V
[4]   Growth and applications of Group III nitrides [J].
Ambacher, O .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1998, 31 (20) :2653-2710
[5]   DEGRADATION OF ALUMINUM NITRIDE POWDER IN AN AQUEOUS ENVIRONMENT [J].
BOWEN, P ;
HIGHFIELD, JG ;
MOCELLIN, A ;
RING, TA .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1990, 73 (03) :724-728
[6]   Structure and stability of aluminum hydroxides: A theoretical study [J].
Digne, M ;
Sautet, P ;
Raybaud, P ;
Toulhoat, H ;
Artacho, E .
JOURNAL OF PHYSICAL CHEMISTRY B, 2002, 106 (20) :5155-5162
[7]   Hydrolysis behavior of aluminum nitride in various solutions [J].
Fukumoto, S ;
Hookabe, T ;
Tsubakino, H .
JOURNAL OF MATERIALS SCIENCE, 2000, 35 (11) :2743-2748
[8]   Thermal oxidation of polycrystalline and single crystalline aluminum nitride wafers [J].
Gu, Z ;
Edgar, JH ;
Speakman, SA ;
Blom, D ;
Perrin, J ;
Chaudhuri, J .
JOURNAL OF ELECTRONIC MATERIALS, 2005, 34 (10) :1271-1279
[9]   Seeded growth of AlN on N- and Al-polar ⟨0 0 0 1⟩ AlN seeds by physical vapor transport [J].
Herro, ZG ;
Zhuang, D ;
Schlesser, R ;
Collazo, R ;
Sitar, Z .
JOURNAL OF CRYSTAL GROWTH, 2006, 286 (02) :205-208
[10]   X-ray photoelectron diffraction from (3X3) and (√3X√3)R30° (001)Si 6H-SiC surfaces [J].
King, SW ;
Ronning, C ;
Davis, RF ;
Busby, RS ;
Nemanich, RJ .
JOURNAL OF APPLIED PHYSICS, 1998, 84 (11) :6042-6048