Seeded growth of AlN on N- and Al-polar ⟨0 0 0 1⟩ AlN seeds by physical vapor transport

被引:82
作者
Herro, ZG [1 ]
Zhuang, D [1 ]
Schlesser, R [1 ]
Collazo, R [1 ]
Sitar, Z [1 ]
机构
[1] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA
关键词
crystal morphology; sublimation growth; aluminum nitride;
D O I
10.1016/j.jcrysgro.2005.10.074
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
We demonstrated seeded growth of AlN on large-area Al- and N-polar < 0 0 0 1 > -oriented AlN seeds using the physical vapor transport method (PVT). In both cases, crystals having a diameter of 15 mm were obtained from 5 man seeds. Based on growth step and terrace width analyses, it was found that the N-polar face was suitable for growth within a large window of growth parameters while the At-polar seeds yielded high-quality crystals only at low supersaturation. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:205 / 208
页数:4
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