Natural growth habit of bulk AlN crystals

被引:69
作者
Epelbaum, BM
Seitz, C
Magerl, A
Bickermann, M
Winnacker, A
机构
[1] Univ Erlangen Nurnberg, Dept Mat Sci 6, D-91058 Erlangen, Germany
[2] Univ Erlangen Nurnberg, Dept Crystallog & Struct Phys, D-91054 Erlangen, Germany
关键词
crystal morphology; growth front vapor; nitrides; semiconducting aluminum compounds;
D O I
10.1016/j.jcrysgro.2004.02.100
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Growth conditions for self-nucleation and subsequent growth of bulk AlN crystals by sublimation are presented. With increasing growth temperature, the natural habit of AlN crystals changes from needle-like to prismatic and then turns to thick asymmetric platelet. The best-formed platelet crystals up to 14 x 7 x 2 mm(3) in size exhibit a number of atomically smooth surfaces. Growth morphology and crystal quality were found to be strongly influenced by the polar nature of AlN. Al-terminated faces produce mirror-like facets and transparent material of high crystalline quality, whereas development of N-terminated faces leads to opaque and defective sectors in grown crystals. It is suggested that the most successful seeded growth of AlN can be achieved along Al-terminated (0001), ((1) over bar 012) and non-polar ((1) over bar 010) faces. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:577 / 581
页数:5
相关论文
共 11 条
[1]   Virtual reactor as a new tool for modeling and optimization of SiC bulk crystal growth [J].
Bogdanov, MV ;
Galyukov, AO ;
Karpov, SY ;
Kulik, AV ;
Kochuguev, SK ;
Ofengeim, DK ;
Tsiryulnikov, AV ;
Ramm, MS ;
Zhmakin, AI ;
Makarov, YN .
JOURNAL OF CRYSTAL GROWTH, 2001, 225 (2-4) :307-311
[2]  
DONNAY JDH, 1963, CRYSTAL DATA
[3]   Bulk AlN crystal growth: self-seeding and seeding on 6H-SiC substrates [J].
Edgar, JH ;
Liu, L ;
Liu, B ;
Zhuang, D ;
Chaudhuri, J ;
Kuball, M ;
Rajasingam, S .
JOURNAL OF CRYSTAL GROWTH, 2002, 246 (3-4) :187-193
[4]  
Lely J.A., 1955, Berichte der Deutschen Keramischen Gesellschaft, V32, P229
[5]   MORPHOLOGIE UND WACHSTUMSMECHANISMUS VON AIN-EINKRISTALLEN [J].
PASTRNAK, J ;
ROSKOVCOVA, L .
PHYSICA STATUS SOLIDI, 1964, 7 (01) :331-338
[6]   Polarity determination for GaN films grown on (0001) sapphire and high-pressure-grown GaN single crystals [J].
Rouviere, JL ;
Weyher, JL ;
Seelmann-Eggebert, M ;
Porowski, S .
APPLIED PHYSICS LETTERS, 1998, 73 (05) :668-670
[7]   Seeded growth of AlN bulk single crystals by sublimation [J].
Schlesser, R ;
Dalmau, R ;
Sitar, Z .
JOURNAL OF CRYSTAL GROWTH, 2002, 241 (04) :416-420
[8]  
SCHOWALTER LJ, MRS INTERNET J NITRI, DOI UNSP W6.7
[9]   GROWTH OF HIGH-PURITY AIN CRYSTALS [J].
SLACK, GA ;
MCNELLY, TF .
JOURNAL OF CRYSTAL GROWTH, 1976, 34 (02) :263-279
[10]   INVESTIGATION OF GROWTH PROCESSES OF INGOTS OF SILICON-CARBIDE SINGLE-CRYSTALS [J].
TAIROV, YM ;
TSVETKOV, VF .
JOURNAL OF CRYSTAL GROWTH, 1978, 43 (02) :209-212