Sublimation growth of bulk AIN crystals: process temperature and growth rate

被引:12
作者
Epelbaum, BM
Bickermann, M
Winnacker, A
机构
[1] Univ Erlangen Nurnberg, Dept Mat Sci 6, D-91058 Erlangen, Germany
[2] SiCrystal AG, D-91052 Erlangen, Germany
来源
SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2 | 2004年 / 457-460卷
关键词
AIN single crystal; bulk growth; sublimation growth; growth rate; growth temperature;
D O I
10.4028/www.scientific.net/MSF.457-460.1537
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This study was made to estimate the temperature range for AlN growth by sublimation and to evaluate the rate-limiting step in order to achieve bulk growth at practically useful rates. Growth experiments have been conducted in a proprietary designed reactor capable up to 2500degreesC in vertical transport geometry. PVT transport of AlN was found to be feasible in a wide range of temperature starting from 1850degreesC, but stable growth of well-faceted crystals was possible only at temperatures exceeding 2100degreesC. Quick material transport in combination with insufficient crucible integrity at said temperatures is a crucial problem and the main size-limiting factor in PVT growth of AlN. Polycrystalline boules up to two inch in diameter and up to 15 mm produced at growth rates 0.3-3.0 mm/h have been demonstrated. Grown material is a theoretically dense, highly pure (below 100 ppm of oxygen), textured bulk containing single-crystalline areas larger than 5x5 mm(2).
引用
收藏
页码:1537 / 1540
页数:4
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