AlGaN/GaN heterostructure field-effect transistors on single-crystal bulk AlN

We report on the performance of AlGaN/GaN/AlN heterostructure field-effect transistors (HFETs) grown over slightly-off c-axis, single-crystal, bulk AlN substrates. Dc and rf characteristics of these devices were comparable to HFETs grown on semi-insulating SiC. The obtained results demonstrate that bulk AlN substrates are suitable for fabricating high-power microwave AlGaN/GaN transistors. (C) 2003 American Institute of Physics.