Practical plasma immersion ion implantation for stress regulation and treatment of insulators

被引：9

作者：

Bilek, MMM ^{[1
]}

McKenzie, DR ^{[1
]}

Tarrant, RN ^{[1
]}

Oates, TWH ^{[1
]}

Ruch, P ^{[1
]}

Newton-McGee, K ^{[1
]}

Shi, Y ^{[1
]}

Tompsett, D ^{[1
]}

Nguyen, HC ^{[1
]}

Gan, BK ^{[1
]}

Kwok, DT ^{[1
]}

机构：

[1] Univ Sydney, Sch Phys, Sydney, NSW 2006, Australia

来源：

CONTRIBUTIONS TO PLASMA PHYSICS | 2004年 / 44卷 / 5-6期

关键词：

cathodic arc; stress relief; microstructure; AlN; TiN; amorphous carbon; preferred orientation; plasma immersion ion implantation; PEEK; polymer; surface modification; wetting;

D O I：

10.1002/ctpp.200410065

中图分类号：

O35 [流体力学]; O53 [等离子体物理学];

学科分类号：

070204 ; 080103 ; 080704 ;

摘要：

Plasma immersion ion implantation has been attracting the interest of research groups around the world over the last two decades. The technique has been developed to the stage where it is a well-established technique for a number of materials processing applications, such as plasma nitriding. Recent research has focussed on developing the method for a range of new applications, including stress regulation and control of microstructure, as well as surface treatment of insulators. Recent developments in these technologically important applications are discussed in this paper. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

收藏

页码：465 / 471

页数：7

相关论文

共 19 条

[1] Metal plasma immersion ion implantation and deposition: a review [J].

Anders, A .

SURFACE & COATINGS TECHNOLOGY, 1997, 93 (2-3) :158-167

[2] Influence of gas pressure and cathode composition on ion energy distributions in filtered cathodic vacuum arcs [J].

Bilek, MMM ;

Martin, PJ ;

McKenzie, DR .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (06) :2965-2970

[3] Control of stress and microstructure in cathodic arc deposited films [J].

Bilek, MMM ;

Tarrant, RN ;

McKenzie, DR ;

Lim, SHN ;

McCulloch, DG .

IEEE TRANSACTIONS ON PLASMA SCIENCE, 2003, 31 (05) :939-944

[4] Plasma-based ion implantation utilising a cathodic arc plasma [J].

Bilek, MMM ;

McKenzie, DR ;

Tarrant, RN ;

Lim, SHM ;

McCulloch, DG .

SURFACE & COATINGS TECHNOLOGY, 2002, 156 (1-3) :136-142

[5] NOVEL METAL-ION SURFACE MODIFICATION TECHNIQUE [J].

BROWN, IG ;

GODECHOT, X ;

YU, KM .

APPLIED PHYSICS LETTERS, 1991, 58 (13) :1392-1394

[6] Influence of residual stress and film thickness on crystallographic orientation in Al thin films deposited by bias sputtering [J].

Choi, HM ;

Choi, SK .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1998, 16 (06) :3348-3351

[7] PLASMA SOURCE ION-IMPLANTATION TECHNIQUE FOR SURFACE MODIFICATION OF MATERIALS [J].

CONRAD, JR ;

RADTKE, JL ;

DODD, RA ;

WORZALA, FJ ;

TRAN, NC .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (11) :4591-4596

[8] Effect of intrinsic stress on preferred orientation in AlN thin films [J].

Gan, BK ;

Bilek, MMM ;

McKenzie, DR ;

Taylor, MB ;

McCulloch, DG .

JOURNAL OF APPLIED PHYSICS, 2004, 95 (04) :2130-2134

[9] Stress relief and texture formation in aluminium nitride by plasma immersion ion implantation [J].

Gan, BK ;

Bilek, MMM ;

McKenzie, DR ;

Shi, Y ;

Tompsett, DA ;

Taylor, MB ;

McCulloch, DG .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2004, 16 (10) :1751-1760

[10] The importance of bias pulse rise time for determining shallow implanted dose in plasma immersion ion implantation [J].

Kwok, DTK ;

Bilek, MMM ;

McKenzie, DR ;

Chu, PK .

APPLIED PHYSICS LETTERS, 2003, 82 (12) :1827-1829