AlN/GaN near-infrared quantum-cascade structures with resonant-tunneling injectors utilizing polarization fields

被引：8

作者：

Ishida, A

Inoue, Y

Kuwabara, M

Kan, H

Fujiyasu, H

机构：

[1] Shizuoka Univ, Fac Engn, Dept Elect & Elect Engn, Hamamatsu, Shizuoka 4328561, Japan

[2] HPK, Cent Res Lab, Hamakita 4348601, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2002年 / 41卷 / 11B期

关键词：

AlN; GaN; superlattice; quantum well; cascade; piezo; polarization;

D O I：

10.1143/JJAP.41.L1303

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

AlN/GaN quantum-cascade structures for near-infrared-laser application, which utilize the polarization field for electron injection into higher subbands, are proposed. Multiple-quantum-well resonant-tunneling injection layers are necessary for near-infrared quantum-cascade lasers, and the design of the injection layer is highly simplified in the quantum-cascade structure with superlattice light-emitting layers by utilizing the polarization field.

引用

收藏

页码：L1303 / L1305

页数：3

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