A novel chemical synthesis and characterization of Mn3O4 thin films for supercapacitor application

被引：201

作者：

Dubal, D. P. ^{[1
]}

Dhawale, D. S. ^{[1
]}

Salunkhe, R. R. ^{[1
]}

Pawar, S. M. ^{[2
]}

Lokhande, C. D. ^{[1
]}

机构：

[1] Shivaji Univ, Dept Phys, Thin Film Phys Lab, Kolhapur 416004, Maharashtra, India

[2] Chonnam Natl Univ, Dept Mat Sci & Engn, Photon & Elect Thin Film Lab, Kwangju 500757, South Korea

来源：

APPLIED SURFACE SCIENCE | 2010年 / 256卷 / 14期

关键词：

Mn3O4 thin films; SILAR; Surface morphology; Supercapacitor; BATH DEPOSITION; MANGANESE; OXIDATION; ELECTRODE; BEHAVIOR; RUO2; ZNO;

D O I：

10.1016/j.apsusc.2009.12.057

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Mn3O4 thin films have been prepared by novel chemical successive ionic layer adsorption and reaction (SILAR) method. Further these films were characterized for their structural, morphological and optical properties by means of X-ray diffraction (XRD), Fourier transform infrared spectrum (FTIR), field emission scanning electron microscopy (FESEM), wettability test and optical absorption studies. The XRD pattern showed that the Mn3O4 films exhibit tetragonal hausmannite structure. Formation of manganese oxide compound was confirmed from FTIR studies. The optical absorption showed existence of direct optical band gap of energy 2.30 eV. Mn3O4 film surface showed hydrophilic nature with water contact angle of 558. The supercapacitive properties of Mn3O4 thin film investigated in 1 M Na2SO4 electrolyte showed maximum supercapacitance of 314 F g(-1) at scan rate 5 mV s(-1). (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：4411 / 4416

页数：6

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