Electrical and optical properties of Al-doped ZnO thin films by sol-gel process

被引:271
作者
Kim, Young-Sung
Tai, Weon-Pil
机构
[1] Fine Chem Ind Support Ctr, Ulsan 683804, South Korea
[2] Sungkyunkwan Univ, Adv Mat Proc Informat Technol, Suwon 440746, South Korea
关键词
sol-gel; Al-doped ZnO; surface process; surface structure;
D O I
10.1016/j.apsusc.2006.10.068
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Al-cloped ZnO (AZO) thin films oriented along the (0 0 2) plane have been prepared by the sol-gel process and their electrical and optical properties with post-deposition heating temperature were investigated. The preferred c-axis orientation along the (0 0 2) plane was enhanced with increasing post-deposition heating temperature and the surface of the films showed a uniform and nano-sized microstructure. The electrical resistivity of the films decreased from 73 to 22 Omega cm as the post-deposition heating temperature increased from 500 to 650 degrees C; however, the film postheated at 700 degrees C increased greatly to 580 Omega cm. The optical transmittance of the films postheated below 650 degrees C was over 86%, but it decreased at 700 degrees C. The electrical and optical properties of the AZO filins with post-deposition heating temperature are discussed. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:4911 / 4916
页数:6
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