Electron traps created in gate oxides by Fowler-Nordheim injections

被引：6

作者：

Auriel, G

Oualid, J

Vuillaume, D

机构：

[1] ENSPM, Lab Mat & Composants Semicond, EA 882, F-13397 Marseille 20, France

[2] Inst Elect & Microelect Nord, UMR 9929 CNRS, F-59652 Villeneuve Dascq, France

来源：

MICROELECTRONICS AND RELIABILITY | 1998年 / 38卷 / 02期

关键词：

D O I：

10.1016/S0026-2714(97)00035-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Two types of electron traps, donor-like and acceptor-like, are created in the gate oxide of metal-oxide-semiconductor capacitors by Fowler-Nordheim electron injections. Electrical properties (areal density, capture cross-section, centroid) of each type of trap are determined by using the avalanche electron injection method and by combining capacitance-voltage and current-voltage measurements. These properties are measured with regard to the Fowler-Nordheim fluence up to breakdown and for bath injection modes (electrons injected either from the gate or from the substrate of capacitors). (C) 1998 Elsevier Science Ltd.

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页码：227 / 231

页数：5

相关论文

共 10 条

[1] RADIATION-INDUCED ELECTRON AND HOLE TRAPS IN THERMAL SIO2 [J].

AFANAS'EV, VV ;

DENIJS, JMM ;

STESMANS, A ;

BALK, P .

MICROELECTRONIC ENGINEERING, 1995, 28 (1-4) :43-46

[2] IMPACT IONIZATION, TRAP CREATION, DEGRADATION, AND BREAKDOWN IN SILICON DIOXIDE FILMS ON SILICON [J].

DIMARIA, DJ ;

CARTIER, E ;

ARNOLD, D .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (07) :3367-3384

[3] EFFECTS OF OXIDE TRAPS, INTERFACE TRAPS, AND BORDER TRAPS ON METAL-OXIDE-SEMICONDUCTOR DEVICES [J].

FLEETWOOD, DM ;

WINOKUR, PS ;

REBER, RA ;

MEISENHEIMER, TL ;

SCHWANK, JR ;

SHANEYFELT, MR ;

RIEWE, LC .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (10) :5058-5074

[4] EXPERIMENTS AND MODELING TO DETERMINE TRAPPED HOLES AND SLOW STATES IN FOWLER-NORDHEIM STRESSED MOS CAPACITORS [J].

MORAGUES, JM ;

SAGNES, B ;

YCKACHE, K ;

JERISIAN, R ;

OUALID, J ;

VUILLAUME, D .

MICROELECTRONIC ENGINEERING, 1995, 28 (1-4) :329-332

[5] AVALANCHE INJECTION CURRENTS AND CHARGING PHENOMENA IN THERMAL SIO2 [J].

NICOLLIAN, EH ;

GOETZBERGER, A ;

BERGLUND, CN .

APPLIED PHYSICS LETTERS, 1969, 15 (06) :174-+

[6] ANALYSIS OF THE TRAPPING CHARACTERISTICS OF SILICON DIOXIDE AFTER FOWLER-NORDHEIM DEGRADATION [J].

PAPADAS, C ;

MORFOULI, P ;

GHIBAUDO, G ;

PANANAKAKIS, G .

SOLID-STATE ELECTRONICS, 1991, 34 (12) :1375-1379

[7] SILICON DIOXIDE BREAKDOWN LIFETIME ENHANCEMENT UNDER BIPOLAR BIAS CONDITIONS [J].

ROSENBAUM, E ;

LIU, ZH ;

HU, CM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (12) :2287-2295

[8] CHARGING AND DISCHARGING PROPERTIES OF ELECTRON TRAPS CREATED BY HOT-CARRIER INJECTIONS IN GATE OXIDE OF N-CHANNEL METAL-OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR [J].

VUILLAUME, D ;

BRAVAIX, A .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (05) :2559-2563

[9]

Wolters D. R., 1986, Instabilities in silicon devices. Silicon passivation and related instabilities. Vol.1, P315

[10] KINETICS OF CHARGE TRAPPING IN DIELECTRICS [J].

WOLTERS, DR ;

VANDERSCHOOT, JJ .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (02) :831-837