ANALYSIS OF THE TRAPPING CHARACTERISTICS OF SILICON DIOXIDE AFTER FOWLER-NORDHEIM DEGRADATION

被引：17

作者：

PAPADAS, C

MORFOULI, P

GHIBAUDO, G

PANANAKAKIS, G

机构：

[1] Laboratoire de Physique des Composants à Semiconducteurs, (URA CNRS), ENSERG, 38016 Grenoble, 23 rue des Martyrs

来源：

SOLID-STATE ELECTRONICS | 1991年 / 34卷 / 12期

关键词：

D O I：

10.1016/0038-1101(91)90032-T

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An analysis of the trapping characteristics of silicon dioxide (SiO2) subjected to Fowler-Nordheim degradation is presented. Based on the Fowler-Nordheim threshold and flat-band voltage shifts, the total charge trapped in the oxide (Q(ox)) and the centroid (xBAR) of the trapped charge distribution is extracted while taking into account the charge stored in the fast Si-SiO2 interface states as a function of the Fowler-Nordheim injection dose. Using quasi-first-order kinetic equations the capture cross sections (sigma(i)) and densities (N(t)i) of the oxide bulk traps are also determined.

引用

页码：1375 / 1379

页数：5

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