EFFECT OF AN AL OVERLAYER ON INTERFACE STATES IN POLY-SI GATE MOS CAPACITORS

被引：7

作者：

DUNN, GJ

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 07期

关键词：

D O I：

10.1109/55.29670

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：333 / 335

页数：3

共 9 条

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