DEPENDENCE OF RADIATION-INDUCED INTERFACE TRAPS ON GATE AL THICKNESS IN METAL SIO2/SI STRUCTURES

被引：39

作者：

ZEKERIYA, V

MA, TP

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 04期

关键词：

D O I：

10.1063/1.334094

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1017 / 1020

页数：4

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