Constant-charge-injection programming: A novel high-speed programming method for multilevel flash memories

被引：9

作者：

Kurata, H ^{[1
]}

Saeki, S

Kobayashi, T

Sasago, Y

Arigane, T

Otsuga, K

Kawahara, T

机构：

[1] Hitachi Ltd, Cent Res Lab, Tokyo 1858601, Japan

[2] Renesas No Lapan Semicond Inc, Tokyo 1878588, Japan

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2005年 / 40卷 / 02期

关键词：

AG-AND; CCIP; flash memory; high-speed programming; multilevel cell; SSI;

D O I：

10.1109/JSSC.2004.841019

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Constant-charge-injection programming (CCIP) has been proposed as a way to achieve high-speed multilevel programming in flash memories. In order to achieve high programming throughput in multilevel flash memory, programming method must provide: 1) high-speed cell-programming; 2) high programming efficiency; and 3) highly uniform programming characteristics. Conventional source-side channel-hot-electron injection (SSI) programming realizes both fast cell-programming and high programming efficiency, but the large cell-to-cell variation in programming speed with SSI is a problem. CCIP reduces the characteristic variation of SSI programming and satisfies all of the above requirements. By applying CCIP to 2-bit/cell AG-AND flash memory, the high programming throughput of 10.3 MB/s is obtained with no area penalty. This is 1.8 times faster than the throughput with conventional SSI programming.

引用

页码：523 / 531

页数：9

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