Micromachining using deep ion beam lithography

被引:67
作者
Springham, SV
Osipowicz, T
Sanchez, JL
Gan, LH
Watt, F
机构
[1] NATL UNIV SINGAPORE,DEPT PHYS,SINGAPORE 119260,SINGAPORE
[2] NANYANG TECHNOL UNIV,DIV CHEM,SINGAPORE 259756,SINGAPORE
关键词
D O I
10.1016/S0168-583X(97)00275-9
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
In recent years the process combining deep X-ray lithography with electroforming and micromoulding (i.e. LIGA), has become an important technique for the production of high aspect-ratio microstructures for the fabrication of micro-electromechanical systems (MEMS). The aim of this paper is to investigate the potential of high energy ion microbeams for carrying out similar micromachining, and in particular for overcoming the geometrical restrictions which are inherent in deep x-ray lithography. Using a scanned 2.0 MeV proton beam of approximately 1 micron diameter, we produced latent microstructures in high molecular weight PMMA resist. These resist microstructures were subsequently developed using a multi-component developer which is highly specific in the removal of exposed resist, while leaving unexposed or marginally exposed material unaffected. A suitable range of exposures has been established, and factors affecting the geometrical fidelity of the produced microstructure have been investigated. The relative advantages and limitations of this technique vis a vis deep X-ray lithography are discussed.
引用
收藏
页码:155 / 159
页数:5
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