Electrical characterization of gas sensing devices based on porous TiO2

被引：19

作者：

Skryshevsky, VA

Vikulov, VA

Tretiak, OV

Zinchuk, VM

Koch, F

Dittrich, T

机构：

[1] Kiev Taras Natl Shevchenko Univ, Radiophys Dept, UA-01033 Kiev, Ukraine

[2] Tech Univ Munich, Dept Phys E16, D-85748 Garching, Germany

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 2003年 / 197卷 / 02期

关键词：

D O I：

10.1002/pssa.200306559

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Electrical properties of two kinds of sandwich structures (SnO2:F/por-TiO2/Ti and Si/por-TiO2/Pd) are investigated by the methods of I-V, C-V characteristics and DLTS in vapors of water and alcohol. It has been demonstrated that besides the change of the conductivity and of the capacitance of the por-TiO2 layers one can also use for gas sensing the change of the high frequency capacitance of the MOS type structure, measurement of the current response at relatively low frequencies and the modification of the charge transfer between the Si bulk and states near the por-TiO2/Si interface.

引用

页码：534 / 538

页数：5

共 7 条

[1]

Bogner M, 1998, APPL PHYS LETT, V73, P2524, DOI 10.1063/1.122503

[2]

GOPEL W, 1996, SENSORS UPDATE

[3]

Kytin V, 2001, PHYS STATUS SOLIDI A, V185, P461, DOI 10.1002/1521-396X(200106)185:2<461::AID-PSSA461>3.0.CO

[4]

2-P

[5]

Lide D. R., 1994, CRC HDB CHEM PHYSICS, P6

[6] Electrical features of the metal-thin porous silicon-silicon structure [J].

Vikulov, VA ;

Strikha, VI ;

Skryshevsky, VA ;

Kilchitskaya, SS ;

Souteyrand, E ;

Martin, JR .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2000, 33 (16) :1957-1964

[7]

WEIDMAN J, 1998, THESIS TU MUNCHEN

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