Ferroelectricity of heteroepitaxial Ba0.6Sr0.4TiO3 ultrathin films

被引：12

作者：

Abe, K

Komatsu, S

Yanase, N

Sano, K

Kawakubo, T

机构：

[1] Mat./Devices Research Laboratories, R and D Center, Toshiba Corp., Saiwai-ku

来源：

INTEGRATED FERROELECTRICS | 1997年 / 17卷 / 1-4期

关键词：

heteroepitaxial growth; stress-induced ferroelectricity;

D O I：

10.1080/10584589708012984

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Remanent polarization (2P(r)) larger than 0.4 C/m(2) has been obtained in heteroepitaxial Ba0.6Sr0.4TiO3 (BSTO) films, even though the thickness was reduced to as thin as 26 nm. Ferroelectricity is induced by 2-dimensional stress, which is caused by lattice mismatch between the dielectric film and the bottom electrode (SrRuO3). The Curie temperature was confirmed to shift toward higher temperature by more than 200 degrees C. These results constitute a significant advance toward the practical realization of ferroelectric nonvolatile memories with a large capacity of 256 M to 1 G bit.

引用

页码：89 / 96

页数：8

共 4 条

[1] FERROELECTRIC PROPERTIES IN EPITAXIALLY GROWN BAXSR1-XTIO3 THIN-FILMS [J].