Characterization of piezoelectric (111)B InGaAs/GaAs p-i-n quantum well structures using photoreflectance spectroscopy

被引：23

作者：

Chan, CH ^{[1
]}

Chen, MC

Lin, HH

Chen, YF

Jan, GJ

Chen, YH

机构：

[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 10764, Taiwan

[2] Natl Taiwan Univ Technol, Dept Phys, Taipei, Taiwan

[3] Grad Inst Electroopt Engn, Taipei, Taiwan

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 10期

关键词：

D O I：

10.1063/1.121015

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Strained-layer (111)B In0.2Ga0.8As/GaAs p-i-n quantum well structures grown with exciton transitions well resolved at room temperature have been studied by photoreflectance spectroscopy. Using the reduced mass deduced from experiments, the built-in electric field in the barrier region is obtained from the above band-gap Franz-Keldysh oscillations. The strain-induced piezoelectric field is then determined directly from a comparison of the periods of Franz-Keldysh oscillations in different samples. Numerical solutions for the exciton transitions from the derived potential profiles are in good agreement with the experimental results. The piezoelectric constant is also determined using the piezoelectric field. (C) 1998 American Institute of Physics. [S0003-6951(98)01410-7].

引用

页码：1208 / 1210

页数：3

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