Manufacturability of 20-nm ultrathin body fully depleted SOI devices with FUSI metal gates

被引：6

作者：

Krivokapic, Z ^{[1
]}

Maszara, WWP ^{[1
]}

Lin, MR ^{[1
]}

机构：

[1] AMD, Sunnyvale, CA 94088 USA

来源：

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING | 2005年 / 18卷 / 01期

关键词：

dopant fluctuations; full silicidation (FUSI); fully depleted silicon-on-insulator (FDSOI); selective epi; silicon thickness control; ultrathin body (UTB); V-th variations;

D O I：

10.1109/TSM.2004.841819

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ultrathin body (UTB) fully depleted silicon-on-insulator (FDSOI) devices show great performance due to undoped channels and excellent electrostatic control. Very high drive currents and good off-state leakage, ideal subthreshold slope, and small drain-induced barrier lowering (DIBL) have been reported with devices as short as 20 run. The ultrathin channel enables high device performance, but it imposes a new set of problems. The control of the silicon thickness has become the dominant source of device variations. Selective epitaxial growth has become a necessity to achieve high performance and reliable contacts to UTB FDSOI devices. This paper discusses silicon thickness control, selective epitaxial growth, and the mid-gap gate module needed for fully depleted devices. Very good control of short channel effect is shown and drive current fluctuations are discussed.

引用

页码：5 / 12

页数：8

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