On the electron mobility in ultrathin SOI and GOI

被引：26

作者：

Khakifirooz, A ^{[1
]}

Antoniadis, DA ^{[1
]}

机构：

[1] MIT, Microsyst Technol Labs, Cambridge, MA 02139 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2004年 / 25卷 / 02期

关键词：

germanium-on-insulator (GOI); mobility; phonon scattering; silicon-on-insulator (SOI);

D O I：

10.1109/LED.2003.822650

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The mobility of electrons in ultrathin silicon-on-insulator (SOI) and germanium-on-insulator (GOI) is studied. Quantum simulations are carried out to calculate phonon-limited mobility based on the experimental data for bulk. Modulation of the electron population in different ladders is shown to have A constructive effect in (111) Ge, whereas in (100) Ge mobility drops monotonically with either increase of gate bias or by thinning the GOI film.

引用

页码：80 / 82

页数：3

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