On the mobility versus drain current relation for a nanoscale MOSFET

被引：189

作者：

Lundstrom, MS ^{[1
]}

机构：

[1] Purdue Univ, Dept Elect & Comp Engn, W Lafayette, IN 47907 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2001年 / 22卷 / 06期

关键词：

ballistic transport; charge carrier mobility; MOSFET; MOSFET scaling; velocity overshoot;

D O I：

10.1109/55.924846

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The dependence of the linear and saturated drain current of a nanoscale MOSFET on the near-equilibrium, inversion layer mobility of a long-channel device from the same technology is examined, Simple expressions developed from a scattering theory of the MOSFET provide a quantitative relation between the long-channel mobility and the short-channel drain current. The theory explains the commonly observed mobility-dependence of the linear and saturated drain currents in present-day deep submicron MOSFETs, and the results can be extrapolated all the may to the ballistic limit.

引用

页码：293 / 295

页数：3

共 18 条

[1] On the performance limits for Si MOSFET's: A theoretical study
Assad, F
Ren, ZB
Vasileska, D
Datta, S
Lundstrom, M
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (01) : 232 - 240
[2] Assad F., 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318), P547, DOI 10.1109/IEDM.1999.824213
[3] BANOO K, 7 INT WORKSH COMP EL
[4] THE BETHE CONDITION FOR THERMIONIC EMISSION NEAR AN ABSORBING BOUNDARY
BERZ, F
[J]. SOLID-STATE ELECTRONICS, 1985, 28 (10) : 1007 - 1013
[5] MONTE-CARLO SIMULATION OF SUBMICROMETER SI N-MOSFETS AT 77-K AND 300-K
LAUX, SE
FISCHETTI, MV
[J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (09) : 467 - 469
[6] On experimental determination of carrier velocity in deeply scaled NMOS: How close to the thermal limit?
Lochtefeld, A
Antoniadis, DA
[J]. IEEE ELECTRON DEVICE LETTERS, 2001, 22 (02) : 95 - 97
[7] Elementary scattering theory of the Si MOSFET
Lundstrom, M
[J]. IEEE ELECTRON DEVICE LETTERS, 1997, 18 (07) : 361 - 363
[8] BALLISTIC METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR
NATORI, K
[J]. JOURNAL OF APPLIED PHYSICS, 1994, 76 (08) : 4879 - 4890
[9] A total resistance slope-based effective channel mobility extraction method for deep submicrometer CMOS technology
Niu, GF
Cressler, JD
Mathew, SJ
Subbanna, S
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (09) : 1912 - 1914
[10] Nonstationary electron/hole transport in sub-0.1 μm MOS devices:: Correlation with mobility and low-power CMOS application
Ohba, R
Mizuno, T
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (02) : 338 - 343

← 1 2 →