Nonstationary electron/hole transport in sub-0.1 μm MOS devices:: Correlation with mobility and low-power CMOS application

被引：45

作者：

Ohba, R ^{[1
]}

Mizuno, T ^{[1
]}

机构：

[1] Toshiba Corp, Ctr Corp Res & Dev, Adv LSi Technol Lab, Yokohama, Kanagawa 2358522, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2001年 / 48卷 / 02期

关键词：

CMOS; MOSFET; mobility; nonstationary; overshoot; Si; SOI; velocity;

D O I：

10.1109/16.902736

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have experimentally studied the high-lateral-field carrier velocity near the source edge in sub-0.1 mum MOSFETs. It is demonstrated that the high-field electron velocity and hole velocity have universal low-field mobility dependence. This shows that the hole velocity is lower than the electron velocity due to the hole's lower mobility. Moreover, we have investigated the low-power CMOS operation using the velocity overshoot. It is verified that there is the most suitable supply voltage for improving the CMOS operation using the velocity overshoot. The most suitable supply voltage is shown to be about 1 V. Therefore, the velocity overshoot will be very useful for the low voltage CMOS operation in future.

引用

页码：338 / 343

页数：6

共 16 条

[1] AN INVESTIGATION OF STEADY-STATE VELOCITY OVERSHOOT IN SILICON
BACCARANI, G
WORDEMAN, MR
[J]. SOLID-STATE ELECTRONICS, 1985, 28 (04) : 407 - 416
[2] OBSERVATION OF ELECTRON VELOCITY OVERSHOOT IN SUB-100-NM-CHANNEL MOSFETS IN SILICON
CHOU, SY
ANTONIADIS, DA
SMITH, HI
[J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (12) : 665 - 667
[3] NUMERICAL-SIMULATION OF A STEADY-STATE ELECTRON SHOCK-WAVE IN A SUBMICROMETER SEMICONDUCTOR-DEVICE
GARDNER, CL
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (02) : 392 - 398
[4] HIGH-PERFORMANCE 0.10-MU-M CMOS DEVICES OPERATING AT ROOM-TEMPERATURE
IWASE, M
MIZUNO, T
TAKAHASHI, M
NIIYAMA, H
FUKUMOTO, M
ISHIDA, K
INABA, S
TAKIGAMI, Y
SANDA, A
TORIUMI, A
YOSHIMI, M
[J]. IEEE ELECTRON DEVICE LETTERS, 1993, 14 (02) : 51 - 53
[5] Remote charge scattering in MOSFETs with ultra-thin gate dielectrics
Krishnan, MS
Yeo, YC
Lu, Q
King, TJ
Bokor, J
Hu, CM
[J]. INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST, 1998, : 571 - 574
[6] MONTE-CARLO SIMULATION OF SUBMICROMETER SI N-MOSFETS AT 77-K AND 300-K
LAUX, SE
FISCHETTI, MV
[J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (09) : 467 - 469
[7] Elementary scattering theory of the Si MOSFET
Lundstrom, M
[J]. IEEE ELECTRON DEVICE LETTERS, 1997, 18 (07) : 361 - 363
[8] Velocity overshoot greater than 10(7) cm/s at room temperature in sub-0.1-mu m silicon-on-insulator devices
Mizuno, T
Ohba, R
Ohuchi, K
[J]. APPLIED PHYSICS LETTERS, 1996, 69 (01) : 106 - 108
[9] Ultra-shallow undoped 2DEGs in GaAs-AlGaAs heterostructures
Das Gupta, K.
Mak, W. Y.
Sfigakis, F.
Beere, H. E.
Farrer, I.
Ritchie, D. A.
[J]. PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2011, 1399
[10] Experimental analysis of velocity overshoot degradation in sub-0.1 mu m fully-depleted SOI-MOSFETs
Ohba, R
Mizuno, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (3B): : 1543 - 1547

← 1 2 →