MONTE-CARLO SIMULATION OF SUBMICROMETER SI N-MOSFETS AT 77-K AND 300-K

被引：94

作者：

LAUX, SE

FISCHETTI, MV

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 09期

关键词：

D O I：

10.1109/55.6947

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：467 / 469

页数：3

相关论文

共 14 条

[1] FINITE-ELEMENT ANALYSIS OF SEMICONDUCTOR-DEVICES - THE FIELDAY PROGRAM
BUTURLA, EM
COTTRELL, PE
GROSSMAN, BM
SALSBURG, KA
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1981, 25 (04) : 218 - 231
[2] BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES
COHEN, ML
BERGSTRESSER, TK
[J]. PHYSICAL REVIEW, 1966, 141 (02): : 789 - +
[3] FISCHETTI MV, IN PRESS PHYS REV B
[4] A NEW DISCRETIZATION STRATEGY OF THE SEMICONDUCTOR EQUATIONS COMPRISING MOMENTUM AND ENERGY-BALANCE
FORGHIERI, A
GUERRIERI, R
CIAMPOLINI, P
GNUDI, A
RUDAN, M
BACCARANI, G
[J]. IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1988, 7 (02) : 231 - 242
[5] Hockney R.W., 1988, COMPUTER SIMULATIONS
[6] TWO-DIMENSIONAL ANALYSIS OF VELOCITY OVERSHOOT EFFECTS IN ULTRASHORT-CHANNEL SI MOSFETS
KOBAYASHI, T
SAITO, K
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (04) : 788 - 792
[7] MONTE-CARLO TREATMENT OF ELECTRON-ELECTRON COLLISIONS
MATULIONIS, A
POZELA, J
REKLAITIS, A
[J]. SOLID STATE COMMUNICATIONS, 1975, 16 (10-1) : 1133 - 1137
[8] HIGH-FIELD DRIFT VELOCITY OF ELECTRONS IN SILICON INVERSION-LAYERS
MODELLI, A
MANZINI, S
[J]. SOLID-STATE ELECTRONICS, 1988, 31 (01) : 99 - 104
[9] MONTE-CARLO CALCULATIONS ON HOT-ELECTRON ENERGY TAILS
PHILLIPS, A
PRICE, PJ
[J]. APPLIED PHYSICS LETTERS, 1977, 30 (10) : 528 - 530
[10] HIGH TRANSCONDUCTANCE AND VELOCITY OVERSHOOT IN NMOS DEVICES AT THE 0.1-MU-M GATE-LENGTH LEVEL
SAIHALASZ, GA
WORDEMAN, MR
KERN, DP
RISHTON, S
GANIN, E
[J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (09) : 464 - 466