HIGH-FIELD DRIFT VELOCITY OF ELECTRONS IN SILICON INVERSION-LAYERS

[1] BACCARANI G, 1985, NASECODE DUBLIN, V4

[2] VELOCITY OF SURFACE CARRIERS IN INVERSION-LAYERS ON SILICON [J]. SOLID-STATE ELECTRONICS, 1980, 23 (01) : 35 - 40

[3] COEN RW, ERL M7936 U CAL EL R

[4] HIGH-FIELD DRIFT VELOCITY OF ELECTRONS AT THE SI-SIO2 INTERFACE AS DETERMINED BY A TIME-OF-FLIGHT TECHNIQUE [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) : 1445 - 1456

[5] HOT ELECTRON EFFECTS AND SATURATION VELOCITIES IN SILICON INVERSION LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) : 1825 - +

[6] REVIEW OF SOME CHARGE TRANSPORT PROPERTIES OF SILICON [J]. SOLID-STATE ELECTRONICS, 1977, 20 (02) : 77 - 89

[7] MANZINI S, 1984, 41 TECH REP

[8] VELOCITY SATURATION IN SHORT CHANNEL FIELD-EFFECT TRANSISTORS [J]. SOLID STATE COMMUNICATIONS, 1980, 34 (06) : 447 - 449

[9] A PHYSICALLY BASED MOBILITY MODEL FOR MOSFET NUMERICAL-SIMULATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (02) : 310 - 320

[10] SABNIS AG, 1979, IEDM TECH DIG, P18

[1] BACCARANI G, 1985, NASECODE DUBLIN, V4

[2] VELOCITY OF SURFACE CARRIERS IN INVERSION-LAYERS ON SILICON [J]. SOLID-STATE ELECTRONICS, 1980, 23 (01) : 35 - 40

[3] COEN RW, ERL M7936 U CAL EL R

[4] HIGH-FIELD DRIFT VELOCITY OF ELECTRONS AT THE SI-SIO2 INTERFACE AS DETERMINED BY A TIME-OF-FLIGHT TECHNIQUE [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) : 1445 - 1456

[5] HOT ELECTRON EFFECTS AND SATURATION VELOCITIES IN SILICON INVERSION LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) : 1825 - +

[6] REVIEW OF SOME CHARGE TRANSPORT PROPERTIES OF SILICON [J]. SOLID-STATE ELECTRONICS, 1977, 20 (02) : 77 - 89

[7] MANZINI S, 1984, 41 TECH REP

[8] VELOCITY SATURATION IN SHORT CHANNEL FIELD-EFFECT TRANSISTORS [J]. SOLID STATE COMMUNICATIONS, 1980, 34 (06) : 447 - 449

[9] A PHYSICALLY BASED MOBILITY MODEL FOR MOSFET NUMERICAL-SIMULATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (02) : 310 - 320

[10] SABNIS AG, 1979, IEDM TECH DIG, P18