A PHYSICALLY BASED MOBILITY MODEL FOR MOSFET NUMERICAL-SIMULATION

被引：42

作者：

NISHIDA, T

SAH, CT

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 02期

关键词：

D O I：

10.1109/T-ED.1987.22924

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：310 / 320

页数：11

共 19 条

[1] ROLE OF SCATTERING BY SURFACE-ROUGHNESS IN SILICON INVERSION LAYERS [J].

CHENG, YC ;

SULLIVAN, EA .

SURFACE SCIENCE, 1973, 34 (03) :717-731

[2]

HESS K, 1975, SURF SCI, V47, P650, DOI 10.1016/0039-6028(75)90209-5

[3]

MATSUMOTO Y, 1972, AUG SURF QUANT TRANS

[4] SCATTERING OF ELECTRONS BY SURFACE OXIDE CHARGES AND BY LATTICE-VIBRATIONS AT SILICON-SILICON DIOXIDE INTERFACE [J].

SAH, CT ;

TSCHOPP, LL ;

NING, TH .

SURFACE SCIENCE, 1972, 32 (03) :561-&

[5] EFFECT OF ZINC IMPURITY ON SILICON SOLAR-CELL EFFICIENCY [J].

SAH, CT ;

CHAN, PCH ;

WANG, CK ;

SAH, RLY ;

YAMAKAWA, KA ;

LUTWACK, R .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (03) :304-313

[6]

SAH CT, 1973, B AM PHYS SOC, V18, P344

[7] CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR TRANSISTORS [J].

SAH, CT .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (07) :324-+

[8]

SAH CT, 1983, COMMUNICATION 1110

[9]

SAH CT, 1973, MAR AM PHYS SOC M SA

[10]

SAH CT, 1980, AUG LECT NOT EL COUR, P57

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