EFFECT OF ZINC IMPURITY ON SILICON SOLAR-CELL EFFICIENCY

被引：47

作者：

SAH, CT

CHAN, PCH

WANG, CK

SAH, RLY

YAMAKAWA, KA

LUTWACK, R

机构：

[1] MIT,CAMBRIDGE,MA 02139

[2] CALTECH,JET PROP LAB,PASADENA,CA 91103

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1981年 / 28卷 / 03期

关键词：

D O I：

10.1109/T-ED.1981.20333

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：304 / 313

页数：10

共 28 条

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[7] BORON-DIFFUSION IN SILICON-CONCENTRATION AND ORIENTATION DEPENDENCE, BACKGROUND EFFECTS, AND PROFILE ESTIMATION [J].

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[8] ANALYSIS OF PHOSPHORUS-DIFFUSED LAYERS IN SILICON [J].

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