A NEW DISCRETIZATION STRATEGY OF THE SEMICONDUCTOR EQUATIONS COMPRISING MOMENTUM AND ENERGY-BALANCE

被引:113
作者
FORGHIERI, A
GUERRIERI, R
CIAMPOLINI, P
GNUDI, A
RUDAN, M
BACCARANI, G
机构
关键词
D O I
10.1109/43.3153
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
引用
收藏
页码:231 / 242
页数:12
相关论文
共 28 条
[1]  
AZOFF EM, 1986, DEC P NUMOS 1 C LOS
[2]  
Baccarani G., 1986, Process and device modeling, P107
[3]   AN INVESTIGATION OF STEADY-STATE VELOCITY OVERSHOOT IN SILICON [J].
BACCARANI, G ;
WORDEMAN, MR .
SOLID-STATE ELECTRONICS, 1985, 28 (04) :407-416
[4]  
Baccarani G., 1985, P NASECODE 4 C, P3
[5]   TRANSPORT EQUATIONS FOR ELECTRONS IN 2- VALLEY SEMICONDUCTORS [J].
BLOTEKJAER, K .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (01) :38-+
[6]   HIGH-FIELD DIFFUSION OF ELECTRONS IN SILICON [J].
CANALI, C ;
JACOBONI, C ;
OTTAVIANI, G ;
ALBERIGIQUARANTA, A .
APPLIED PHYSICS LETTERS, 1975, 27 (05) :278-280
[7]   ALCOHOL-CONSUMPTION AND BLOOD-PRESSURE - SURVEY OF THE RELATIONSHIP AT A HEALTH-SCREENING CLINIC [J].
COOKE, KM ;
FROST, GW ;
THORNELL, IR ;
STOKES, GS .
MEDICAL JOURNAL OF AUSTRALIA, 1982, 1 (02) :65-69
[8]   DEVICE MODELING [J].
ENGL, WL ;
DIRKS, HK ;
MEINERZHAGEN, B .
PROCEEDINGS OF THE IEEE, 1983, 71 (01) :10-33
[9]   NUMERICAL-SIMULATION OF POLYCRYSTALLINE-SILICON MOSFETS [J].
GUERRIERI, R ;
CIAMPOLINI, P ;
GNUDI, A ;
RUDAN, M ;
BACCARANI, G .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (08) :1201-1206