NUMERICAL-SIMULATION OF POLYCRYSTALLINE-SILICON MOSFETS

被引：40

作者：

GUERRIERI, R

CIAMPOLINI, P

GNUDI, A

RUDAN, M

BACCARANI, G

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 08期

关键词：

D O I：

10.1109/T-ED.1986.22642

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1201 / 1206

页数：6

共 13 条

[1] IV CHARACTERISTICS OF POLYCRYSTALLINE SILICON RESISTORS
BACCARANI, G
IMPRONTA, M
RICCO, B
FERLA, P
[J]. REVUE DE PHYSIQUE APPLIQUEE, 1978, 13 (12): : 777 - 782
[2] TRANSPORT PROPERTIES OF POLYCRYSTALLINE SILICON FILMS
BACCARANI, G
RICCO, B
SPADINI, G
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (11) : 5565 - 5570
[3] BACCARANI G, 1985, JUN NAS 4 DUBL
[4] CURRENT TRANSPORT IN METAL-SEMICONDUCTOR BARRIERS
CROWELL, CR
SZE, SM
[J]. SOLID-STATE ELECTRONICS, 1966, 9 (11-1) : 1035 - &
[5] Depp S. W., 1982, Grain Boundaries in Semiconductors. Proceedings of the Materials Research Society Annual Meeting, P297
[6] CHARACTERISTICS OF MOSFETS FABRICATED IN LASER-RECRYSTALLIZED POLYSILICON ISLANDS WITH A RETAINING WALL STRUCTURE ON AN INSULATING SUBSTRATE
LAM, HW
TASCH, AF
HOLLOWAY, TC
[J]. ELECTRON DEVICE LETTERS, 1980, 1 (10): : 206 - 208
[7] A CONDUCTION MODEL FOR SEMICONDUCTOR GRAIN-BOUNDARY SEMICONDUCTOR BARRIERS IN POLYCRYSTALLINE-SILICON FILMS
LU, NC
GERZBERG, L
LU, CY
MEINDL, JD
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (02) : 137 - 149
[8] MODELING AND OPTIMIZATION OF MONOLITHIC POLYCRYSTALLINE SILICON RESISTORS
LU, NCC
GERZBERG, L
LU, CY
MEINDL, JD
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (07) : 818 - 830
[9] CHARACTERISTICS AND 3-DIMENSIONAL INTEGRATION OF MOSFETS IN SMALL-GRAIN LPCVD POLYCRYSTALLINE SILICON
MALHI, SDS
SHICHIJO, H
BANERJEE, SK
SUNDARESAN, R
ELAHY, M
POLLACK, GP
RICHARDSON, WF
SHAH, AH
HITE, LR
WOMACK, RH
CHATTERJEE, PK
LAM, HW
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) : 258 - 281
[10] Oana Y., 2014, JPN J APPL PHYS, V22, P493, DOI [10.7567/JJAPS.22S1.493, DOI 10.7567/JJAPS.22S1.493]

← 1 2 →