HIGH TRANSCONDUCTANCE AND VELOCITY OVERSHOOT IN NMOS DEVICES AT THE 0.1-MU-M GATE-LENGTH LEVEL

[1] Antognetti P., 1981, International Electron Devices Meeting, P574

[2] OBSERVATION OF ELECTRON VELOCITY OVERSHOOT IN SUB-100-NM-CHANNEL MOSFETS IN SILICON [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (12) : 665 - 667

[3] COOPER JA, 1981, ELECTRON DEVIC LETT, V2, P171, DOI 10.1109/EDL.1981.25387

[4] Dennard R., 1972, IEDM, P344

[5] HOT ELECTRON EFFECTS AND SATURATION VELOCITIES IN SILICON INVERSION LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) : 1825 - +

[6] PHYSICS OF EXCESS ELECTRON VELOCITY IN SUB-MICRONCHANNEL FETS [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (11) : 4791 - 4798

[7] MONTE-CARLO SIMULATION OF SUBMICROMETER SI N-MOSFETS AT 77-K AND 300-K [J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (09) : 467 - 469

[8] HIGH-FIELD DRIFT VELOCITY OF ELECTRONS IN SILICON INVERSION-LAYERS [J]. SOLID-STATE ELECTRONICS, 1988, 31 (01) : 99 - 104

[9] LITHOGRAPHY FOR ULTRASHORT CHANNEL SILICON FIELD-EFFECT TRANSISTOR-CIRCUITS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (01): : 140 - 145

[10] ELECTRON DYNAMICS IN SHORT CHANNEL FIELD-EFFECT TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (05) : 652 - &

[1] Antognetti P., 1981, International Electron Devices Meeting, P574

[2] OBSERVATION OF ELECTRON VELOCITY OVERSHOOT IN SUB-100-NM-CHANNEL MOSFETS IN SILICON [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (12) : 665 - 667

[3] COOPER JA, 1981, ELECTRON DEVIC LETT, V2, P171, DOI 10.1109/EDL.1981.25387

[4] Dennard R., 1972, IEDM, P344

[5] HOT ELECTRON EFFECTS AND SATURATION VELOCITIES IN SILICON INVERSION LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) : 1825 - +

[6] PHYSICS OF EXCESS ELECTRON VELOCITY IN SUB-MICRONCHANNEL FETS [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (11) : 4791 - 4798

[7] MONTE-CARLO SIMULATION OF SUBMICROMETER SI N-MOSFETS AT 77-K AND 300-K [J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (09) : 467 - 469

[8] HIGH-FIELD DRIFT VELOCITY OF ELECTRONS IN SILICON INVERSION-LAYERS [J]. SOLID-STATE ELECTRONICS, 1988, 31 (01) : 99 - 104

[9] LITHOGRAPHY FOR ULTRASHORT CHANNEL SILICON FIELD-EFFECT TRANSISTOR-CIRCUITS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (01): : 140 - 145

[10] ELECTRON DYNAMICS IN SHORT CHANNEL FIELD-EFFECT TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (05) : 652 - &