LITHOGRAPHY FOR ULTRASHORT CHANNEL SILICON FIELD-EFFECT TRANSISTOR-CIRCUITS

[1] SUB-20-NM-WIDE METAL LINES BY ELECTRON-BEAM EXPOSURE OF THIN POLY(METHYL METHACRYLATE) FILMS AND LIFTOFF [J]. APPLIED PHYSICS LETTERS, 1981, 38 (06) : 436 - 439

[2] OBSERVATION OF ELECTRON VELOCITY OVERSHOOT IN SUB-100-NM-CHANNEL MOSFETS IN SILICON [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (12) : 665 - 667

[3] COANE PJ, 1982, MICROCIRCUIT ENG, V82, P373

[4] COANE PJ, 1982, 10TH P S EL ION BEAM, V2

[5] Horiguchi S., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P761

[6] PICOSECOND PHOTOELECTRON SCANNING ELECTRON-MICROSCOPE FOR NONCONTACT TESTING OF INTEGRATED-CIRCUITS [J]. APPLIED PHYSICS LETTERS, 1987, 51 (02) : 145 - 147

[7] POINT EXPOSURE DISTRIBUTION MEASUREMENTS FOR PROXIMITY CORRECTION IN ELECTRON-BEAM LITHOGRAPHY ON A SUB-100 NM SCALE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (01): : 135 - 141

[8] MEASUREMENT OF THE PROFILE OF FINELY FOCUSED ELECTRON-BEAMS IN A SCANNING ELECTRON-MICROSCOPE [J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1984, 17 (04): : 296 - 303

[9] DESIGN AND EXPERIMENTAL TECHNOLOGY FOR 0.1-MU-M GATE-LENGTH LOW-TEMPERATURE OPERATION FETS [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (10) : 463 - 466

[10] Shahidi G. G., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P824

[1] SUB-20-NM-WIDE METAL LINES BY ELECTRON-BEAM EXPOSURE OF THIN POLY(METHYL METHACRYLATE) FILMS AND LIFTOFF [J]. APPLIED PHYSICS LETTERS, 1981, 38 (06) : 436 - 439

[2] OBSERVATION OF ELECTRON VELOCITY OVERSHOOT IN SUB-100-NM-CHANNEL MOSFETS IN SILICON [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (12) : 665 - 667

[3] COANE PJ, 1982, MICROCIRCUIT ENG, V82, P373

[4] COANE PJ, 1982, 10TH P S EL ION BEAM, V2

[5] Horiguchi S., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P761

[6] PICOSECOND PHOTOELECTRON SCANNING ELECTRON-MICROSCOPE FOR NONCONTACT TESTING OF INTEGRATED-CIRCUITS [J]. APPLIED PHYSICS LETTERS, 1987, 51 (02) : 145 - 147

[7] POINT EXPOSURE DISTRIBUTION MEASUREMENTS FOR PROXIMITY CORRECTION IN ELECTRON-BEAM LITHOGRAPHY ON A SUB-100 NM SCALE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (01): : 135 - 141

[8] MEASUREMENT OF THE PROFILE OF FINELY FOCUSED ELECTRON-BEAMS IN A SCANNING ELECTRON-MICROSCOPE [J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1984, 17 (04): : 296 - 303

[9] DESIGN AND EXPERIMENTAL TECHNOLOGY FOR 0.1-MU-M GATE-LENGTH LOW-TEMPERATURE OPERATION FETS [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (10) : 463 - 466

[10] Shahidi G. G., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P824