DESIGN AND EXPERIMENTAL TECHNOLOGY FOR 0.1-MU-M GATE-LENGTH LOW-TEMPERATURE OPERATION FETS

[1] TRANSCONDUCTANCE DEGRADATION IN THIN-OXIDE MOSFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (10) : 1295 - 1304

[2] GENERALIZED SCALING THEORY AND ITS APPLICATION TO A 1/4 MICROMETER MOSFET DESIGN [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (04) : 452 - 462

[3] OBSERVATION OF ELECTRON VELOCITY OVERSHOOT IN SUB-100-NM-CHANNEL MOSFETS IN SILICON [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (12) : 665 - 667

[4] Dennard R., 1972, IEDM, P344

[5] Horiguchi S., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P761

[6] TWO-DIMENSIONAL ANALYSIS OF VELOCITY OVERSHOOT EFFECTS IN ULTRASHORT-CHANNEL SI MOSFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (04) : 788 - 792

[7] EFFECT OF THE ELECTRON-TEMPERATURE ON THE GATE-INDUCED CHARGE IN SMALL SIZE MOS-TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1983, 26 (06) : 611 - 615

[8] RISHTON SA, 1987, 31ST P INT S EL ION

[9] DEVICE-GRADE ULTRA-SHALLOW JUNCTIONS FABRICATED WITH ANTIMONY [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (09) : 534 - 536

[10] Shahidi G. G., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P824

[1] TRANSCONDUCTANCE DEGRADATION IN THIN-OXIDE MOSFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (10) : 1295 - 1304

[2] GENERALIZED SCALING THEORY AND ITS APPLICATION TO A 1/4 MICROMETER MOSFET DESIGN [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (04) : 452 - 462

[3] OBSERVATION OF ELECTRON VELOCITY OVERSHOOT IN SUB-100-NM-CHANNEL MOSFETS IN SILICON [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (12) : 665 - 667

[4] Dennard R., 1972, IEDM, P344

[5] Horiguchi S., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P761

[6] TWO-DIMENSIONAL ANALYSIS OF VELOCITY OVERSHOOT EFFECTS IN ULTRASHORT-CHANNEL SI MOSFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (04) : 788 - 792

[7] EFFECT OF THE ELECTRON-TEMPERATURE ON THE GATE-INDUCED CHARGE IN SMALL SIZE MOS-TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1983, 26 (06) : 611 - 615

[8] RISHTON SA, 1987, 31ST P INT S EL ION

[9] DEVICE-GRADE ULTRA-SHALLOW JUNCTIONS FABRICATED WITH ANTIMONY [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (09) : 534 - 536

[10] Shahidi G. G., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P824