EFFECT OF THE ELECTRON-TEMPERATURE ON THE GATE-INDUCED CHARGE IN SMALL SIZE MOS-TRANSISTORS

被引：7

作者：

LEBURTON, JP ^{[1
]}

DORDA, G ^{[1
]}

机构：

[1] SIEMENS AG,RES LABS,MUNICH,FED REP GER

来源：

SOLID-STATE ELECTRONICS | 1983年 / 26卷 / 06期

关键词：

D O I：

10.1016/0038-1101(83)90177-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：611 / 615

页数：5

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