Experimental analysis of velocity overshoot degradation in sub-0.1 mu m fully-depleted SOI-MOSFETs

We have experimentally investigated the carrier velocity overshoot and the physical mechanism for the carrier velocity degradation in fully-depleted silicon-on-insulator (SOI) n-channel metal-oxide-semiconductor field-effect-transistors (nMOSFETs). In sub-0.1 mu m region, the velocity overshoot greater than 1 x 10(7) cm/s is realized at room temperature when the gate drive is low. However, in the higher gate drive region, the carrier velocity is degraded remarkably. The velocity degradation due to the self-heating effects is found to be smaller than the degradation caused by the increase of the vertical field. Moreover; in addition to the above velocity degradation mechanism, the velocity is also degraded by some anomalous scattering at higher gate drive. However, in sub-0.1 mu m SOI-nMOSFETs, a high performance can be achieved by using the velocity overshoot effect at a low supply voltage.