MEASUREMENT AND MODELING OF SELF-HEATING IN SOI NMOSFETS

被引:261
作者
SU, LT [1 ]
CHUNG, JE [1 ]
ANTONIADIS, DA [1 ]
GOODSON, KE [1 ]
FLIK, MI [1 ]
机构
[1] MIT,DEPT MECH ENGN,CAMBRIDGE,MA 02139
关键词
D O I
10.1109/16.259622
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Self-heating in SOI nMOSFET's is measured and modeled. Temperature rises in excess of 100 K are observed for SOI devices under static operating conditions. The measured temperature rise agrees well with the predictions of an analytical model and is a function of the silicon thickness, buried oxide thickness, and channel-metal contact separation. Under dynamic circuit conditions, the channel temperatures are much lower than predicted from the static power dissipation. This work provides the foundation for the extraction of device modeling parameters for dynamic operation (at constant temperature) from static device characterization data (where temperature varies widely). Self-heating does not greatly reduce the electromigration reliability of SOI circuits, but might influence SOI device design, e.g., requiring a thinner buried oxide layer for particular applications and scaled geometries.
引用
收藏
页码:69 / 75
页数:7
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