LINEAR DYNAMIC SELF-HEATING IN SOI MOSFET

被引：21

作者：

CAVIGLIA, AL ^{[1
]}

ILIADIS, AA ^{[1
]}

机构：

[1] UNIV MARYLAND,DEPT ELECT ENGN,COLL PK,MD 20742

来源：

IEEE ELECTRON DEVICE LETTERS | 1993年 / 14卷 / 03期

关键词：

Electric network analyzers - Electric properties - Frequency response - Heating - Semiconductor device models - Silicon on insulator technology - Vectors;

D O I：

10.1109/55.215135

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A model for small-signal dynamic self-heating is derived for the general case of a two-port device and then specialized to the case of an SOI MOSFET. The model is fitted to measured data for an SOI MOSFET and shown to accurately describe the frequency dependence of the self-heating. For this device, three time constants of 0.25 mus, 17 ns, and 90 ps adequately characterize the thermal response, showing that self-heating effects are active over a very wide frequency range.

引用

页码：133 / 135

页数：3

共 12 条

[1]

ARMSTRONG GA, 1989 IEEE SOS SOI TE, P44

[2] ESTIMATION OF HEAT-TRANSFER IN SOI-MOSFETS [J].