ELECTRON VELOCITY OVERSHOOT AT ROOM AND LIQUID-NITROGEN TEMPERATURES IN SILICON INVERSION-LAYERS

被引：104

作者：

SHAHIDI, GG

ANTONIADIS, DA

SMITH, HI

机构：

[1] MIT, Cambridge, MA, USA, MIT, Cambridge, MA, USA

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 02期

关键词：

LIQUID NITROGEN TEMPERATURES - LOW FIELD MOBILITY - SILICON INVERSION LAYERS - SUBMICROMETER-CHANNEL-LENGTH SILICON MOSFET;

D O I：

10.1109/55.2051

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：94 / 96

页数：3

共 11 条

[1] SUB-100-NM CHANNEL-LENGTH TRANSISTORS FABRICATED USING X-RAY-LITHOGRAPHY
CHOU, SY
SMITH, HI
ANTONIADIS, DA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (01): : 253 - 255
[2] RELATIONSHIP BETWEEN MEASURED AND INTRINSIC TRANSCONDUCTANCES OF FETS
CHOU, SY
ANTONIADIS, DA
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (02) : 448 - 450
[3] OBSERVATION OF ELECTRON VELOCITY OVERSHOOT IN SUB-100-NM-CHANNEL MOSFETS IN SILICON
CHOU, SY
ANTONIADIS, DA
SMITH, HI
[J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (12) : 665 - 667
[4] Conwell E M, 1967, HIGH FIELD TRANSPORT
[5] PHYSICS OF EXCESS ELECTRON VELOCITY IN SUB-MICRONCHANNEL FETS
HUANG, RS
LADBROOKE, PH
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (11) : 4791 - 4798
[6] TWO-DIMENSIONAL ANALYSIS OF VELOCITY OVERSHOOT EFFECTS IN ULTRASHORT-CHANNEL SI MOSFETS
KOBAYASHI, T
SAITO, K
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (04) : 788 - 792
[7] ELECTRON DYNAMICS IN SHORT CHANNEL FIELD-EFFECT TRANSISTORS
RUCH, JG
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (05) : 652 - &
[8] MINIMOS - A TWO-DIMENSIONAL MOS-TRANSISTOR ANALYZER
SELBERHERR, S
SCHUTZ, A
POTZL, HW
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1540 - 1550
[9] EXPERIMENTAL DERIVATION OF THE SOURCE AND DRAIN RESISTANCE OF MOS-TRANSISTORS
SUCIU, PI
JOHNSTON, RL
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (09) : 1846 - 1848
[10] ELECTRON-MOBILITY IN INVERSION AND ACCUMULATION LAYERS ON THERMALLY OXIDIZED SILICON SURFACES
SUN, SC
PLUMMER, JD
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1497 - 1508

← 1 2 →