SUB-100-NM CHANNEL-LENGTH TRANSISTORS FABRICATED USING X-RAY-LITHOGRAPHY

被引：24

作者：

CHOU, SY ^{[1
]}

SMITH, HI ^{[1
]}

ANTONIADIS, DA ^{[1
]}

机构：

[1] MIT, DEPT ELECT ENGN & COMP SCI, CAMBRIDGE, MA 02139 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 01期

关键词：

D O I：

10.1116/1.583451

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

TRANSISTORS, FIELD EFFECT

引用

页码：253 / 255

页数：3

共 10 条

[1] X-RAY-LITHOGRAPHY FOR SUB-100-NM-CHANNEL-LENGTH TRANSISTORS USING MASKS FABRICATED WITH CONVENTIONAL PHOTOLITHOGRAPHY, ANISOTROPIC ETCHING, AND OBLIQUE SHADOWING
CHOU, SY
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[2] CHOU SY, UNPUB IEEE ELECTRON
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[7] EXPERIMENTAL DERIVATION OF THE SOURCE AND DRAIN RESISTANCE OF MOS-TRANSISTORS
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[8] SWARTZ RG, 1982, 1982 IEDM, P642
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[10] FABRICATION OF SUB-100-NM LINEWIDTH PERIODIC STRUCTURES FOR STUDY OF QUANTUM EFFECTS FROM INTERFERENCE AND CONFINEMENT IN SI INVERSION-LAYERS
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