X-RAY-LITHOGRAPHY FOR SUB-100-NM-CHANNEL-LENGTH TRANSISTORS USING MASKS FABRICATED WITH CONVENTIONAL PHOTOLITHOGRAPHY, ANISOTROPIC ETCHING, AND OBLIQUE SHADOWING

被引：13

作者：

CHOU, SY ^{[1
]}

SMITH, HI ^{[1
]}

ANTONIADIS, DA ^{[1
]}

机构：

[1] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 06期

关键词：

D O I：

10.1116/1.582943

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1587 / 1589

页数：3

共 6 条

[1] BERNACKI SE, 1974, 6TH P INT C EL ION B
[2] CHOU SY, UNPUB J VAC SCI TE B
[3] ENERGY DISSIPATION IN A THIN POLYMER FILM BY ELECTRON-BEAM SCATTERING - EXPERIMENT
HAWRYLUK, RJ
SMITH, HI
SOARES, A
HAWRYLUK, AM
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (06) : 2528 - 2537
[4] Henke B. L., 1982, Atomic Data and Nuclear Data Tables, V27, P1, DOI 10.1016/0092-640X(82)90002-X
[5] FABRICATION OF X-RAY MASKS USING ANISOTROPIC ETCHING OF (110) SI AND SHADOWING TECHNIQUES
TSUMITA, N
MELNGAILIS, J
HAWRYLUK, AM
SMITH, HI
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04): : 1211 - 1213
[6] PC1 DUP CO B