FABRICATION OF X-RAY MASKS USING ANISOTROPIC ETCHING OF (110) SI AND SHADOWING TECHNIQUES

被引：14

作者：

TSUMITA, N

MELNGAILIS, J

HAWRYLUK, AM

SMITH, HI

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 19卷 / 04期

关键词：

D O I：

10.1116/1.571246

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1211 / 1213

页数：3

相关论文

共 5 条

[1] ANISOTROPIC ETCHING OF SILICON
BEAN, KE
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (10) : 1185 - 1193
[2] X-RAY-LITHOGRAPHY AT - 100-A LINEWIDTHS USING X-RAY MASKS FABRICATED BY SHADOWING TECHNIQUES
FLANDERS, DC
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06): : 1615 - 1619
[3] REPLICATION OF 175-A LINES AND SPACES IN POLYMETHYLMETHACRYLATE USING X-RAY-LITHOGRAPHY
FLANDERS, DC
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[4] RECTANGULAR-PROFILE DIFFRACTION GRATING FROM SINGLE-CRYSTAL SILICON
JOSSE, M
KENDALL, DL
[J]. APPLIED OPTICS, 1980, 19 (01): : 72 - 76
[5] VERTICAL ETCHING OF SILICON AT VERY HIGH ASPECT RATIOS
KENDALL, DL
[J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1979, 9 : 373 - 403