A high-performance 0.05 mu m SOI MOS FET: Possibility of velocity overshoot

被引：5

作者：

Ohuchi, K ^{[1
]}

Ohba, R ^{[1
]}

Niiyama, H ^{[1
]}

Nakajima, K ^{[1
]}

Mizuno, T ^{[1
]}

机构：

[1] TOSHIBA CO LTD,ULTRA LARGE SCALE INTEGRAT RES LABS,SAIWAI KU,KAWASAKI,KANAGAWA 210,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 2B期

关键词：

velocity overshoot; MOS FET; SOI; self-heating; transconductance; nonstationary transport; mobility; lattice temperature;

D O I：

10.1143/JJAP.35.960

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A high-transconductance 0.05 mu m n-channel metal-oxide-semiconductor field-effect transistor (MOS FET) has been realized using thin silicon on insulator (SOI)/buried oxide structures. The measured and the intrinsic transconductance values are 472 mS/mm and 702 mS/mm, respectively. These are the highest G(m) values yet reported for SOI MOS FET. Electron velocity, however, is 82% of the bulk saturation velocity, v(sst). This is mainly due to the degradation of the mobility caused by scattering in the SOI layer and the temperature increment induced by the self-heating effect. Therefore, it is important to achieve both mobility-degradation-free and sell-heating-free conditions in order to realize a high-speed SOI MOS FET using the carrier velocity overshoot.

引用

页码：960 / 964

页数：5

共 12 条

[1] AN INVESTIGATION OF STEADY-STATE VELOCITY OVERSHOOT IN SILICON
BACCARANI, G
WORDEMAN, MR
[J]. SOLID-STATE ELECTRONICS, 1985, 28 (04) : 407 - 416
[2] SCALING CONSTRAINTS IMPOSED BY SELF-HEATING IN SUBMICRON SOI MOSFETS
DALLMANN, DA
SHENAI, K
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (03) : 489 - 496
[3] NUMERICAL-SIMULATION OF A STEADY-STATE ELECTRON SHOCK-WAVE IN A SUBMICROMETER SEMICONDUCTOR-DEVICE
GARDNER, CL
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (02) : 392 - 398
[4] KOGA J, 1995, 42 SPRING M JAP SOC
[5] MATSUZAWA K, 1991, P 7 INT C NUM AN SEM, P173
[6] CURRENT-VOLTAGE CHARACTERISTICS OF SILICON-ON-INSULATOR METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS IN BALLISTIC MODE
NATORI, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1B): : 554 - 557
[7] HIGH TRANSCONDUCTANCE AND VELOCITY OVERSHOOT IN NMOS DEVICES AT THE 0.1-MU-M GATE-LENGTH LEVEL
SAIHALASZ, GA
WORDEMAN, MR
KERN, DP
RISHTON, S
GANIN, E
[J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (09) : 464 - 466
[8] MEASUREMENT AND MODELING OF SELF-HEATING IN SOI NMOSFETS
SU, LT
CHUNG, JE
ANTONIADIS, DA
GOODSON, KE
FLIK, MI
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (01) : 69 - 75
[9] ON THE UNIVERSALITY OF INVERSION LAYER MOBILITY IN SI MOSFETS .1. EFFECTS OF SUBSTRATE IMPURITY CONCENTRATION
TAKAGI, S
TORIUMI, A
IWASE, M
TANGO, H
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (12) : 2357 - 2362
[10] Takagi S., 1988, International Electron Devices Meeting. Technical Digest (IEEE Cat. No.88CH2528-8), P398, DOI 10.1109/IEDM.1988.32840

← 1 2 →