MEASUREMENT OF INTRINSIC CAPACITANCE OF LIGHTLY DOPED DRAIN (LDD) MOSFETS

被引：17

作者：

ISHIUCHI, H

MATSUMOTO, Y

SAWADA, S

OZAWA, O

机构：

来源：

关键词：

D O I：

10.1109/T-ED.1985.22264

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2238 / 2242

页数：5

共 17 条

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[3] A SCALEABLE TECHNIQUE FOR THE MEASUREMENT OF INTRINSIC MOS CAPACITANCE WITH ATTO-FARAD RESOLUTION
IWAI, H
ORISTIAN, JE
WALKER, JT
DUTTON, RW
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) : 344 - 356
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WARD, DE
DUTTON, RW
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1571 - 1578
[9] MEASUREMENT OF MINIMUM-GEOMETRY MOS-TRANSISTOR CAPACITANCES
PAULOS, JJ
ANTONIADIS, DA
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) : 357 - 363
[10] PAULOS JJ, 1982, ISSCC, P238