Ultra-shallow undoped 2DEGs in GaAs-AlGaAs heterostructures

被引：11

作者：

Das Gupta, K. ^{[1
]}

Mak, W. Y. ^{[1
]}

Sfigakis, F. ^{[1
]}

Beere, H. E. ^{[1
]}

Farrer, I. ^{[1
]}

Ritchie, D. A. ^{[1
]}

机构：

[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

来源：

PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS | 2011年 / 1399卷

关键词：

undoped heterostructure; shallow ohmics; surface states; 2-DIMENSIONAL ELECTRON; GASES;

D O I：

10.1063/1.366389

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have developed a method of fabricating very shallow, gateable, undoped 2-dimensional electron gases (2DEG) and making very low resistivity contacts to these. We studied the evolution of mobility as a function of the depth of the 2DEG (from 300nm to 30nm). We extract quantitative information about the background impurity concentration in GaAs and AlGaAs, the interface roughness and the charge in the surface states. Surface charge sets an intrinsic limit to the mobility of very shallow 2DEGs. It is probably impossible, to fabricate such shallow high-mobility 2DEGs using modulation doping due to the need to accomodate a spacer layer.

引用

页数：2

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