Charge loss after 60Co irradiation of flash arrays

被引：40

作者：

Cellere, G ^{[1
]}

Paccagnella, A

Lora, S

Pozza, A

Tao, G

Scarpa, A

机构：

[1] Univ Padua, Dept Informat Engn, Padua, Italy

[2] CNR, ISOF, Padua, Italy

[3] Philips Semiconductor, Nijmegen, Netherlands

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2004年 / 51卷 / 05期

关键词：

flash memories; radiation effects; semiconductor devices radiation effects; total ionizing dose;

D O I：

10.1109/TNS.2004.835056

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Flash memories are the most important among modern nonvolatile memory technologies. We are showing new results on the threshold voltage shifts in Flash memory arrays after Co-60 irradiation. A (relatively) high total dose, exceeding 100 krad (SiO2), is needed to induce errors in the array, but threshold voltage shifts are all but negligible even at lower doses. These shifts can be accurately described by using a model which considers the charges generated by irradiation in all the oxides surrounding the floating gate. We are also showing that cycling (endurance) and total ionizing dose effects mutually add.

引用

页码：2912 / 2916

页数：5

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