THE NATURE OF THE TRAPPED HOLE ANNEALING PROCESS

[1] BOESCH HE, 1982, IEEE T NUCL SCI, V29, P1446

[2] NEW MODEL FOR NEGATIVE VOLTAGE INSTABILITY IN MOS DEVICES [J]. APPLIED PHYSICS LETTERS, 1975, 26 (03) : 116 - 118

[3] DEFECT PRODUCTION IN SIO2 BY X-RAY AND CO-60 RADIATIONS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (06) : 4363 - 4368

[4] Dressendorfer P. V., 1989, IONIZING RAD EFFECTS, P87

[5] OXYGEN VACANCY MODEL FOR E'/1 CENTER IN SIO2 [J]. SOLID STATE COMMUNICATIONS, 1974, 14 (03) : 225 - 229

[6] POSITIVE CHARGE EFFECTS ON THE FLAT-BAND VOLTAGE SHIFT DURING AVALANCHE INJECTION ON AL-SIO2-SI CAPACITORS [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) : 3129 - 3135

[7] CHARACTERIZATION OF 3 E'-CENTER VARIANTS IN X-IRRADIATED AND GAMMA-IRRADIATED HIGH-PURITY A-SIO2 [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1984, 1 (2-3) : 481 - 488

[8] RADIATION-INDUCED DEFECTS IN SIO2 AS DETERMINED WITH XPS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) : 1462 - 1466

[9] LOW-TEMPERATURE IRRADIATION EFFECTS IN SIO2-INSULATED MIS DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (03) : 1310 - 1317

[10] ODMR OF RECOMBINATION CENTERS IN CRYSTALLINE QUARTZ [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (16): : 2943 - 2951

[1] BOESCH HE, 1982, IEEE T NUCL SCI, V29, P1446

[2] NEW MODEL FOR NEGATIVE VOLTAGE INSTABILITY IN MOS DEVICES [J]. APPLIED PHYSICS LETTERS, 1975, 26 (03) : 116 - 118

[3] DEFECT PRODUCTION IN SIO2 BY X-RAY AND CO-60 RADIATIONS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (06) : 4363 - 4368

[4] Dressendorfer P. V., 1989, IONIZING RAD EFFECTS, P87

[5] OXYGEN VACANCY MODEL FOR E'/1 CENTER IN SIO2 [J]. SOLID STATE COMMUNICATIONS, 1974, 14 (03) : 225 - 229

[6] POSITIVE CHARGE EFFECTS ON THE FLAT-BAND VOLTAGE SHIFT DURING AVALANCHE INJECTION ON AL-SIO2-SI CAPACITORS [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) : 3129 - 3135

[7] CHARACTERIZATION OF 3 E'-CENTER VARIANTS IN X-IRRADIATED AND GAMMA-IRRADIATED HIGH-PURITY A-SIO2 [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1984, 1 (2-3) : 481 - 488

[8] RADIATION-INDUCED DEFECTS IN SIO2 AS DETERMINED WITH XPS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) : 1462 - 1466

[9] LOW-TEMPERATURE IRRADIATION EFFECTS IN SIO2-INSULATED MIS DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (03) : 1310 - 1317

[10] ODMR OF RECOMBINATION CENTERS IN CRYSTALLINE QUARTZ [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (16): : 2943 - 2951