Thermoelectric effects in submicron heterostructure barriers

被引：76

作者：

Shakouri, A ^{[1
]}

Lee, EY ^{[1
]}

Smith, DL ^{[1
]}

Narayanamurti, V ^{[1
]}

Bowers, JE ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

MICROSCALE THERMOPHYSICAL ENGINEERING | 1998年 / 2卷 / 01期

关键词：

D O I：

10.1080/108939598200097

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

Nonisothermal electron transport in thin barrier heterostructures is investigated using Monte Carlo techniques. Particular attention is paid to the energy balance in thermionic emission, and the Joule heating in the barrier region. By introducing an energy relaxation length, an equation for the temperature distribution inside the device is derived. Conditions for creating a steady-state temperature gradient and for integrated cooling of electronic components are examined.

引用

页码：37 / 47

页数：11

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