Fine structure in the Er-related emission spectrum from Er-Si-O matrices at room temperature under carrier mediated excitation

被引：36

作者：

Isshiki, H

Polman, A

Kimura, T

机构：

[1] Univ Electrocommun, Dept Elect Engn, Chofu, Tokyo 1828585, Japan

[2] FOM, Inst Atom & Mol Phys, NL-1098 SJ Amsterdam, Netherlands

来源：

JOURNAL OF LUMINESCENCE | 2003年 / 102卷

关键词：

Er; PL; Stark splitting; Si;

D O I：

10.1016/S0022-2313(02)00648-8

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Er-Si-O crystalline matrices (ESO) have been synthesized by coating the Si surface with an ErCl/ethanol solution, followed by a two-step annealing process, first in oxygen and second in argon. Fine structures of the Er3+-related photoluminescence (PL) spectrum (line width less than 4 meV) have been observed at room temperature. The PL fine structures indicate Stark splitting of the 4f-electron energy levels in erbium ions. The PL excitation spectrum at room temperature shows the carrier-mediated excitation of Er ions. These results suggest that ESO are of a stable and homogeneous structure in semiconducting silicon matrix and are optically very active. The local environment of erbium ions is discussed from the Stark splitting. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

收藏

页码：819 / 824

页数：6

相关论文

共 25 条

[1] LOCAL-STRUCTURE OF 1.54-MU-M-LUMINESCENCE ER-3+ IMPLANTED IN SI [J].

ADLER, DL ;

JACOBSON, DC ;

EAGLESHAM, DJ ;

MARCUS, MA ;

BENTON, JL ;

POATE, JM ;

CITRIN, PH .

APPLIED PHYSICS LETTERS, 1992, 61 (18) :2181-2183

[2] ROOM-TEMPERATURE PHOTOLUMINESCENCE OF ERBIUM-DOPED HYDROGENATED AMORPHOUS-SILICON [J].

BRESLER, MS ;

GUSEV, OB ;

KUDOYAROVA, VK ;

KUZNETSOV, AN ;

PAK, PE ;

TERUKOV, EI ;

YASSIEVICH, IN ;

ZAKHARCHENYA, BP ;

FUHS, W ;

STURN, A .

APPLIED PHYSICS LETTERS, 1995, 67 (24) :3599-3601

[3] Electron paramagnetic resonance and photoluminescence study of Er-impurity complexes in Si [J].

Carey, JD ;

Barklie, RC ;

Donegan, JF ;

Priolo, F ;

Franzò, G ;

Coffa, S .

PHYSICAL REVIEW B, 1999, 59 (04) :2773-2782

[4] Physical and electrical characterization of ultrathin yttrium silicate insulators on silicon [J].

Chambers, JJ ;

Parsons, GN .

JOURNAL OF APPLIED PHYSICS, 2001, 90 (02) :918-933

[5] EVALUATION OF 4-I-15/2 AND 4-I-13/2 STARK-LEVEL ENERGIES IN ERBIUM-DOPED ALUMINOSILICATE GLASS-FIBERS [J].

DESURVIRE, E ;

SIMPSON, JR .

OPTICS LETTERS, 1990, 15 (10) :547-549

[6] OPTICAL ACTIVATION OF ER-3+ IMPLANTED IN SILICON BY OXYGEN IMPURITIES [J].

FAVENNEC, PN ;

LHARIDON, H ;

MOUTONNET, D ;

SALVI, M ;

GAUNEAU, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1990, 29 (04) :L524-L526

[7] ROOM-TEMPERATURE ELECTROLUMINESCENCE FROM ER-DOPED CRYSTALLINE SI [J].

FRANZO, G ;

PRIOLO, F ;

COFFA, S ;

POLMAN, A ;

CARNERA, A .

APPLIED PHYSICS LETTERS, 1994, 64 (17) :2235-2237

[8] ENERGY LEVELS OF SINGLE-CRYSTAL ERBIUM OXIDE [J].

GRUBER, JB ;

HENDERSON, JR ;

MURAMOTO, M ;

RAJNAK, K ;

CONWAY, JG .

JOURNAL OF CHEMICAL PHYSICS, 1966, 45 (02) :477-+

[9] The optically active center and its activation process in Er-doped Si thin film produced by laser ablation [J].

Ishii, M ;

Ishikawa, T ;

Ueki, T ;

Komuro, S ;

Morikawa, T ;

Aoyagi, Y ;

Oyanagi, H .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (08) :4024-4031

[10]

ISSHIKI H, UNPUB