Scanning tunneling microscopy of chemically cleaned germanium (100) surfaces

被引：37

作者：

Gan, S ^{[1
]}

Li, L ^{[1
]}

Nguyen, T ^{[1
]}

Qi, H ^{[1
]}

Hicks, RF ^{[1
]}

Yang, M ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Dept Chem Engn, Los Angeles, CA 90095 USA

来源：

SURFACE SCIENCE | 1998年 / 395卷 / 01期

基金：

美国国家科学基金会;

关键词：

germanium; scanning tunneling microscopy; step-bunching;

D O I：

10.1016/S0039-6028(97)00608-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The effects of HF/H2O2 etching, UV/ozone oxidation, and ultrahigh vacuum annealing on the composition and structure of Ge(100) surfaces has been studied by X-ray photoemission and scanning tunneling microscopy. Our results indicate that any carbon impurities left on the surface after the etch and oxidation steps cannot be completely removed by heating in vacuum. On flat Ge(100), carbon pins the steps in place during annealing. Germanium terraces pile up at these locations, producing a mountain-and-valley structure between 20 and 30 atomic layers in height. On Ge(100) 9 degrees off-axis, step pinning by carbon generates a faceted surface covered with V-shaped ridges. (C) 1998 Published by Elsevier Science B.V.

引用

页码：69 / 74

页数：6

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